The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Mar. 07, 2013
Semiconductor Manufacturing International Corp., Shanghai, CN;
SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP., Shanghai, CN;
Abstract
A semiconductor structure including a double patterned structure and a method for forming the semiconductor structure are provided. A negative photoresist layer is formed on a positive photoresist layer, which is formed over a substrate. An exposure process is performed to form a first exposure region in the positive photoresist layer and to form a second exposure region in the negative photoresist layer in response to a first and a second intensity thresholds of the exposure energy. A negative-tone development process is performed to remove portions of the negative photoresist layer to form first opening(s). The positive photoresist layer is then etched along the first opening(s) to form second opening(s) therein. A positive-tone development process is performed to remove the first exposure region therefrom to form a double patterned positive photoresist layer.