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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9070457 B1

PDFFull Text
Date of Patent:
Jun. 30, 2015

Filed:

May. 24, 2012

Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory

Applicants:

Hideo Ohno, Sendai, JP;

Shoji Ikeda, Sendai, JP;

Michihiko Yamanouchi, Sendai, JP;

Hideo Sato, Sendai, JP;

Katsuya Miura, Higashimurayama, JP;

Inventors:

Hideo Ohno, Sendai, JP;

Shoji Ikeda, Sendai, JP;

Michihiko Yamanouchi, Sendai, JP;

Hideo Sato, Sendai, JP;

Katsuya Miura, Higashimurayama, JP;

Assignee:

Tohoku University, Sendai-shi, Miyagi, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Harry W Byrne

Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01F 10/32 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
G11C 11/16 (2013.01); Y10T 428/1114 (2015.01); H01L 43/08 (2013.01); H01L 27/228 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01);
Abstract

In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.

Find Patent Forward Citations

Ohno, Hideo. (2015). Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory (U.S. Patent No. 9070457). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9070457

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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