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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9059057 B1

PDFFull Text
Date of Patent:
Jun. 16, 2015

Filed:

Jun. 08, 2012

Image sensor having compressive layers

Applicants:

Chun-han Tsao, New Taipei, TW;

Chih-yu Lai, Tainan, TW;

Chih-hui Huang, Yongkang, TW;

Cheng-ta Wu, Shueishang Township, TW;

Yeur-luen Tu, Taichung, TW;

Ching-chun Wang, Tainan, TW;

Shyh-fann Ting, Kaohsiung, TW;

Chia-shiung Tsai, Hsinchu, TW;

Inventors:

Chun-Han Tsao, New Taipei, TW;

Chih-Yu Lai, Tainan, TW;

Chih-Hui Huang, Yongkang, TW;

Cheng-Ta Wu, Shueishang Township, TW;

Yeur-Luen Tu, Taichung, TW;

Ching-Chun Wang, Tainan, TW;

Shyh-Fann Ting, Kaohsiung, TW;

Chia-Shiung Tsai, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., , TW;

Attorney:

Lowe Hauptman & Ham, LLP

Primary Examiner:

Calvin Lee

Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/14632 (2013.01); H01L 27/1464 (2013.01); H01L 27/14643 (2013.01); H01L 27/14687 (2013.01); H01L 27/148 (2013.01);
Abstract

An image sensor device including a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon oxide, and is negatively charged. The second compressively-stressed layer contains silicon nitride, and is negatively charged. A metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a third compressively-stressed layer formed on the metal shield and the second compressively-stressed layer. The third compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the third compressively-stressed layer.

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