The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jul. 18, 2013
Tokyo Electron Limited, Tokyo, JP;
Shifang Li, Pleasanton, CA (US);
Junwei Bao, Los Altos, CA (US);
Hanyou Chu, Palo Alto, CA (US);
Wen Jin, Fremont, CA (US);
Ching-Ling Meng, Sunnyvale, CA (US);
Weiwen Xu, Fremont, CA (US);
Ping Wang, San Jose, CA (US);
Holger Tuitje, Fremont, CA (US);
Mihail Mihaylov, San Jose, CA (US);
Xinkang Tian, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Disclosed is an in-situ optical monitor (ISOM) system and associated method for controlling plasma etching processes during the forming of stepped structures in semiconductor manufacturing. The in-situ optical monitor (ISOM) can be optionally configured for coupling to a surface-wave plasma source (SWP), for example a radial line slotted antenna (RLSA) plasma source. A method is described to correlate the lateral recess of the steps and the etched thickness of a photoresist layer for use with the in-situ optical monitor (ISOM) during control of plasma etching processes in the forming of stepped structures.