The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Feb. 24, 2012
I-ming Chang, ShinChu, TW;
Wen-huei Guo, Chu-bei, TW;
Chih-hao Chang, Chu-Bei, TW;
Shou-zen Chang, Panchiao, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Tung Ying Lee, Hsin-Chu, TW;
Cheng-long Chen, Hsin-Chu, TW;
Jui-chien Huang, Hsin-Chu, TW;
I-Ming Chang, ShinChu, TW;
Wen-Huei Guo, Chu-bei, TW;
Chih-Hao Chang, Chu-Bei, TW;
Shou-Zen Chang, Panchiao, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Tung Ying Lee, Hsin-Chu, TW;
Cheng-Long Chen, Hsin-Chu, TW;
Jui-Chien Huang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus for and a method of forming a semiconductor structure is provided. The apparatus includes a substrate holder that maintains a substrate such that the processing surface is curved, such as a convex or a concave shape. The substrate is held in place using point contacts, a plurality of continuous contacts extending partially around the substrate, and/or a continuous ring extending completely around the substrate. The processing may include, for example, forming source/drain regions, channel regions, silicides, stress memorization layers, or the like.