The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jun. 08, 2012
U-ting Chen, Wanluan Township, TW;
Dun-nian Yaung, Taipei, TW;
Jen-cheng Liu, Hsinchu, TW;
Yu-hao Shih, Tainan, TW;
Chih-chien Wang, Changhua, TW;
Shih Pei Chou, Tainan, TW;
Wei-tung Huang, Tainan, TW;
Cheng-ta Wu, Shueishang Township, TW;
U-Ting Chen, Wanluan Township, TW;
Dun-Nian Yaung, Taipei, TW;
Jen-Cheng Liu, Hsinchu, TW;
Yu-Hao Shih, Tainan, TW;
Chih-Chien Wang, Changhua, TW;
Shih Pei Chou, Tainan, TW;
Wei-Tung Huang, Tainan, TW;
Cheng-Ta Wu, Shueishang Township, TW;
Abstract
A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D. The depth Dis larger than the depth D.