The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2015
Filed:
Jun. 16, 2011
Chun Chieh Lin, Taichung, TW;
Hung-wen Su, Jhubei, TW;
Minghsing Tsai, Chu-Pei, TW;
Syun-ming Jang, Hsin-Chu, TW;
Chun Chieh Lin, Taichung, TW;
Hung-Wen Su, Jhubei, TW;
Minghsing Tsai, Chu-Pei, TW;
Syun-Ming Jang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of fabricating a semiconductor device. The method includes forming a patterned dielectric layer having a plurality of first openings. The method includes forming a conductive liner layer over the patterned dielectric layer, the conductive liner layer partially filling the first openings. The method includes forming a trench mask layer over portions of the conductive liner layer outside the first openings, thereby forming a plurality of second openings, a subset of which are formed over the first openings. The method includes depositing a conductive material in the first openings to form a plurality of vias and in the second openings to form a plurality of metal lines. The method includes removing the trench mask layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile