The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Nov. 12, 2012
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Lin-Ya Huang, Hsinchu, TW;
Chi-Sheng Juan, Zhubei, TW;
Chien-Lin Tseng, Zhubei, TW;
Chang-Sheng Tsao, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method to form a plurality of openings within a substrate with a single photo exposure and a single etch process. A photoresist layer is disposed over a substrate and aligned with a photomask, wherein the photomask comprises a transparent area, a grayscale area, and an opaque area. The photomask and substrate are exposed to radiation comprising a single illumination step to form a first 3-dimensional pattern within the photoresist layer. The 3-dimensional pattern comprises a first opening comprising a first thickness formed by transmitting the radiation through the transparent area with full intensity, and a second opening comprising a second thickness formed by transmitting the radiation through the grayscale area with partial intensity. The 3-dimensional pattern is transferred to form a plurality of openings of varying depths within the substrate through a single etch step.