The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Aug. 03, 2012
Tadahiro Ishizaka, Nirasaki, JP;
Atsushi Gomi, Nirasaki, JP;
Kenzi Suzuki, Nirasaki, JP;
Tatsuo Hatano, Nirasaki, JP;
Yasushi Mizusawa, Nirasaki, JP;
Tadahiro Ishizaka, Nirasaki, JP;
Atsushi Gomi, Nirasaki, JP;
Kenzi Suzuki, Nirasaki, JP;
Tatsuo Hatano, Nirasaki, JP;
Yasushi Mizusawa, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.