The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
May. 15, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Shu-Hui Su, Tucheng, TW;
Cheng-Lin Huang, Hsinchu, TW;
Jiing-Feng Yang, Zhubei, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Ren-Guei Wu, Taoyuan, TW;
Dian-Hau Chen, Hsinchu, TW;
Yuh-Jier Mii, Hsinchu, TW;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02203 (2013.01); H01L 21/7682 (2013.01); H01L 23/5222 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H01L 2924/12044 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A method of manufacturing a semiconductor structure, the method includes removing a portion of a dielectric filler from a first metal-containing layer formed over a semiconductor substrate to define an air-gap region according to a predetermined air-gap pattern. The method further includes filling the air-gap region with a decomposable filler and forming a dielectric capping layer over the first metal-containing layer. The method further includes decomposing the decomposable filler.