The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 01, 2010
Masanobu Honda, Yamanashi, JP;
Hidetoshi Hanaoka, Yamanashi, JP;
Taichi Hirano, Yamanashi, JP;
Takanori Mimura, Yamanashi, JP;
Manabu Iwata, Yamanashi, JP;
Taketoshi Okajo, Yamanashi, JP;
Masanobu Honda, Yamanashi, JP;
Hidetoshi Hanaoka, Yamanashi, JP;
Taichi Hirano, Yamanashi, JP;
Takanori Mimura, Yamanashi, JP;
Manabu Iwata, Yamanashi, JP;
Taketoshi Okajo, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an Ogas and a F containing gas is supplied toward an outer peripheryof an ESCat a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer peripheryof the ESC; an Osingle gas as a mask gas is supplied to the top surface of ESCexcept the outer periphery; and the shoulder depositadhered to the outer peripheryis decomposed and removed while preventing the top surface of ESCexcept the outer peripheryfrom being exposed to a F radical.