The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Apr. 04, 2012
Maud Vinet, Rives, FR;
Laurent Grenouillet, Rives, FR;
Yannick Le Tiec, Crolles, FR;
Nicolas Posseme, Carantec, FR;
Maud Vinet, Rives, FR;
Laurent Grenouillet, Rives, FR;
Yannick Le Tiec, Crolles, FR;
Nicolas Posseme, Carantec, FR;
Abstract
The field effect transistor comprises a substrate successively comprising an electrically conducting support substrate, an electrically insulating layer and a semiconductor material layer. The counter-electrode is formed in a first portion of the support substrate facing the semi-conductor material layer. The insulating pattern surrounds the semi-conductor material layer to delineate a first active area and it penetrates partially into the support layer to delineate the first portion. An electrically conducting contact passes through the insulating pattern from a first lateral surface in contact with the counter-electrode through to a second surface. The contact is electrically connected to the counter-electrode.