The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Aug. 23, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Po-Cheng Shih, Hsinchu, TW;
Joung-Wei Liou, Zhudong Town, TW;
Chih-Hung Sun, Hsin-Chu, TW;
Chia Cheng Chou, Keelung, TW;
Kuang-Yuan Hsu, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Embodiments of an interconnect structure and methods for forming an interconnect structure are provided. The method includes forming a low-k dielectric layer over a substrate, forming an opening in the low-k dielectric layer, forming a conductor in the opening, forming a capping layer over the conductor, and forming an etch stop layer over the capping layer and the low-k dielectric layer. The etch stop layer includes an N element with a content ratio not less than about 25 at %.