The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Dec. 17, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Ching Wang, Jinhu Township, TW;
Jon-Hsu Ho, New Taipei, TW;
Ching-Fang Huang, Taipei, TW;
Wen-Hsing Hsieh, Hsinchu, TW;
Tsung-Hsing Yu, Taipei, TW;
Yi-Ming Sheu, Hsinchu, TW;
Ken-Ichi Goto, Hsin-Chu, TW;
Zhiqiang Wu, Chubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A multi-gate semiconductor device and method for forming the same. A multi-gate semiconductor device is formed including a first fin of a first transistor formed on a semiconductor substrate having a first dopant type. The first transistor has a doped channel region of the first dopant type. The device also includes a second fin of a second transistor formed on the first dopant type semiconductor substrate. The second transistor has a doped channel region of a second dopant type. The device further includes a gate electrode layer of the second dopant type formed over the channel region of the first fin and a gate electrode layer of the first dopant type formed over the channel region of the second fin.