The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Sep. 05, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Szu-Ping Tung, Taipei, TW;
Huang-Yi Huang, Hsin-Chu, TW;
Wen-Jiun Liu, Zhunan Township, TW;
Ching-Hua Hsieh, Hsin-Chu, TW;
Minghsing Tsai, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device, an interconnect structure, and methods of forming the same are disclosed. An embodiment is a method of forming a semiconductor device, the method including forming a first dielectric layer over a substrate, forming a first conductive layer in the first dielectric layer, and removing a first portion of the first conductive layer to form at least two conductive lines in the first dielectric layer, the at least two conductive lines being separated by a first spacing. The method further includes forming a capping layer on the at least two conductive lines, and forming an etch stop layer on the capping layer and the first dielectric layer.