The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Feb. 07, 2012
Kazuhito Tohnoe, Miyagi, JP;
Yusuke Hirayama, Miyagi, JP;
Yasuyoshi Ishiyama, Miyagi, JP;
Wataru Hashizume, Miyagi, JP;
Kazuhito Tohnoe, Miyagi, JP;
Yusuke Hirayama, Miyagi, JP;
Yasuyoshi Ishiyama, Miyagi, JP;
Wataru Hashizume, Miyagi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a plasma etching method including a first process of etching an intermediate layer, which contains silicon and nitrogen and is positioned below a resist mask formed on a surface of a substrate, to cause a silicon layer positioned below the intermediate layer to be exposed through the resist mask and the intermediate layer, a second process of subsequently supplying a chlorine gas to the substrate to cause a reaction product to attach onto sidewalls of opening portions of the resist mask and the intermediate layer, and a third process of etching a portion of the silicon layer corresponding to the opening portion of the intermediate layer using a process gas containing sulfur and fluorine to form a recess in the silicon layer.