The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Oct. 18, 2011
Che-hao Tu, Hsinchu, TW;
Weilun Hong, Hsinchu, TW;
Ying-tsung Chen, Hsinchu, TW;
Liang-guang Chen, Hsinchu, TW;
Che-Hao Tu, Hsinchu, TW;
Weilun Hong, Hsinchu, TW;
Ying-Tsung Chen, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides a method of semiconductor fabrication including forming a dielectric layer is formed on and interposing a first feature and a second feature. A first CMP process is performed on the dielectric layer to removing the dielectric layer from a top surface of the first feature to expose an underlying layer and decreasing a thickness of the dielectric layer disposed on a top surface of the second feature such that a portion of the dielectric layer remains disposed on the top surface of the second feature. Thereafter, a second CMP process is performed which removes the dielectric layer remaining on the top surface of the second feature.