The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Mar. 21, 2005
Applicants:
Tadahiro Ishizaka, Clifton Park, NY (US);
Audunn Ludviksson, Scottsdale, AZ (US);
Inventors:
Tadahiro Ishizaka, Clifton Park, NY (US);
Audunn Ludviksson, Scottsdale, AZ (US);
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/00 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01); C23C 16/34 (2006.01); H01L 21/768 (2006.01); C23C 16/30 (2006.01); H01L 21/314 (2006.01); H01L 21/285 (2006.01); H01L 21/3205 (2006.01); C23C 16/14 (2006.01); C23C 16/509 (2006.01); H01L 21/316 (2006.01); H01L 21/318 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76843 (2013.01); C23C 16/45538 (2013.01); H01L 21/31641 (2013.01); H01L 21/31645 (2013.01); C23C 16/45544 (2013.01); H01L 21/31616 (2013.01); H01J 37/32192 (2013.01); C23C 16/34 (2013.01); H01J 2237/335 (2013.01); C23C 16/303 (2013.01); H01J 37/32082 (2013.01); H01L 21/3141 (2013.01); H01L 21/318 (2013.01); H01L 21/28562 (2013.01); H01L 21/31608 (2013.01); H01L 21/32051 (2013.01); C23C 16/14 (2013.01); C23C 16/5096 (2013.01); H01L 21/31637 (2013.01);
Abstract
A method for processing a substrate includes disposing the substrate in a deposition chamber configured to perform a deposition process and depositing a film on the substrate using the deposition process. The substrate having the film thereon is then transferred from the deposition chamber into a treatment chamber and a plasma cleaning process is performed on the substrate in the treatment chamber. Further processing of the substrate is performed after the plasma cleaning process.
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