The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Jun. 08, 2011
Applicants:

Hiroaki Sato, Yokohama, JP;

Yukio Hashimoto, Hitachinaka, JP;

Yoshikuni Nakadaira, Hodogaya-Ku, JP;

Norihito Masuda, Yokohama, JP;

Belgacem Haba, Saratoga, CA (US);

Ilyas Mohammed, Santa Clara, CA (US);

Philip Damberg, Cupertino, CA (US);

Inventors:

Hiroaki Sato, Yokohama, JP;

Yukio Hashimoto, Hitachinaka, JP;

Yoshikuni Nakadaira, Hodogaya-Ku, JP;

Norihito Masuda, Yokohama, JP;

Belgacem Haba, Saratoga, CA (US);

Ilyas Mohammed, Santa Clara, CA (US);

Philip Damberg, Cupertino, CA (US);

Assignee:

Tessera, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/48 (2006.01); H01L 29/40 (2006.01); H01L 21/56 (2006.01); H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/49822 (2013.01); H01L 21/4857 (2013.01); H01L 23/3128 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 23/49811 (2013.01);
Abstract

A microelectronic assembly may include a substrate containing a dielectric element having first and second opposed surfaces. The dielectric element may include a first dielectric layer adjacent the first surface, and a second dielectric layer disposed between the first dielectric layer and the second surface. A Young's modulus of the first dielectric layer may be at least 50% greater than the Young's modulus of the second dielectric layer, which is less than two gigapascal (GPa). A conductive structure may extend through the first and second dielectric layers and electrically connect substrate contacts at the first surface with terminals at the second surface. The substrate contacts may be joined with contacts of a microelectronic element through conductive masses, and a rigid underfill may be between the microelectronic element and the first surface. The terminals may be usable to bond the microelectronic assembly to contacts of a component external to the microelectronic assembly.


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