The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Nov. 19, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yi-Jen Lai, Chang Hua, TW;

Chih-Kang Han, Hsinchu, TW;

Chien-Pin Chan, Pingzhen, TW;

Chih-Yuan Chien, Zhubei, TW;

Huai-Tei Yang, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/81 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 24/11 (2013.01); H01L 21/6836 (2013.01); H01L 2221/6834 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/1357 (2013.01); H01L 2224/136 (2013.01); H01L 2224/16 (2013.01); H01L 2224/81001 (2013.01); H01L 2224/812 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06513 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01032 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01038 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/0104 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/014 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, a pad region on the semiconductor substrate, a passivation layer over the semiconductor substrate and at least a portion of the pad region, and a bump structure overlying the pad region. The passivation layer has an opening defined therein to expose at least another portion of the pad region. The bump structure is electrically connected to the pad region via the opening. The bump structure includes a copper layer and a SnAg layer overlying the copper layer. The SnAg layer has a melting temperature higher than the eutectic temperature of Sn and Ag.


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