The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 10, 2015

Filed:

Mar. 14, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Hsin-Yu Chen, Taipei, TW;

Lin-Chih Huang, Wuri Township, TW;

Tasi-Jung Wu, Hsin-Chu, TW;

Tsang-Jiuh Wu, Hsin-Chu, TW;

Wen-Chih Chiou, Miaoli, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/20 (2013.01); H01L 24/19 (2013.01); H01L 24/82 (2013.01);
Abstract

Methods of making and an integrated circuit device. An embodiment method includes patterning a first polymer layer disposed over a first copper seed layer, electroplating a through polymer via in the first polymer layer using the first copper seed layer, a via end surface offset from a first polymer layer surface, forming a second polymer layer over the first polymer layer, the second polymer layer patterned to expose the via end surface, and electroplating an interconnect in the second polymer layer to cap the via end surface using a second copper seed layer.


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