The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 03, 2015
Filed:
Oct. 28, 2011
Applicants:
Akinobu Kakimoto, Nirasaki, JP;
Katsuhiko Komori, Nirasaki, JP;
Kazuhide Hasebe, Nirasaki, JP;
Inventors:
Assignee:
Tokyo Electron Limited, , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/52 (2006.01); C23C 16/455 (2006.01); C23C 16/22 (2006.01); H01L 21/306 (2006.01); C23F 1/00 (2006.01); H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/04 (2006.01); C23C 16/24 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01); C23C 16/458 (2006.01); C23C 16/46 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); C23C 16/0272 (2013.01); C23C 16/045 (2013.01); C23C 16/24 (2013.01); H01L 21/02425 (2013.01); H01L 21/0245 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01); H01L 21/02639 (2013.01); H01L 21/28525 (2013.01); H01L 21/28556 (2013.01); H01L 21/3065 (2013.01); H01L 21/32135 (2013.01); H01L 21/76805 (2013.01); H01L 21/76814 (2013.01); H01L 21/76876 (2013.01); H01L 21/76877 (2013.01); H01L 29/47166 (2013.01);
Abstract
A film formation apparatus includes a gas supply mechanism for supplying an aminosilane-based gas, and a silane-based gas that does not include an amino group. Processes of forming a seed layer on a surface of the insulation film having the opening reaching the conductive substance and on a bottom surface of the opening by supplying the aminosilane-based gas into the process chamber, and forming a silicon film on the seed layer by supplying the silane-based gas that does not include the amino group into the process chamber, are sequentially performed in the process chamber.
Published as:
US2012103518A1; KR20120047806A; JP2012109537A; CN102543795A; TW201230197A; JP5544343B2; KR101463073B1; US8945339B2; CN102543795B; TWI506698B;