The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2014
Filed:
Jul. 22, 2011
Ming-hsi Yeh, Hsinchu, TW;
Hsien-hsin Lin, Hsinchu, TW;
Ying-hsueh Chang Chien, New Taipei, TW;
Yi-fang Pai, Hsinchu, TW;
Chi-ming Yang, Hsian-San District, TW;
Chin-hsiang Lin, Hsinchu, TW;
Ming-Hsi Yeh, Hsinchu, TW;
Hsien-Hsin Lin, Hsinchu, TW;
Ying-Hsueh Chang Chien, New Taipei, TW;
Yi-Fang Pai, Hsinchu, TW;
Chi-Ming Yang, Hsian-San District, TW;
Chin-Hsiang Lin, Hsinchu, TW;
Abstract
A method for fabricating an integrated device is disclosed. A protective layer is formed over a gate structure when forming epitaxial (epi) features adjacent to another gate structure uncovered by the protective layer. The protective layer is thereafter removed after forming the epitaxial (epi) features. The disclosed method provides an improved method for removing the protective layer without substantial defects resulting. In an embodiment, the improved formation method is achieved by providing a protector over an oxide-base material, and then removing the protective layer using a chemical comprising hydrofluoric acid.