The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Jul. 15, 2008
Applicants:

John C. Forster, San Francisco, CA (US);

Daniel J. Hoffman, Saratoga, CA (US);

John A. Pipitone, Livermore, CA (US);

Xianming Tang, San Jose, CA (US);

Rongjun Wang, Cupertino, CA (US);

Inventors:

John C. Forster, San Francisco, CA (US);

Daniel J. Hoffman, Saratoga, CA (US);

John A. Pipitone, Livermore, CA (US);

Xianming Tang, San Jose, CA (US);

Rongjun Wang, Cupertino, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/34 (2013.01); H01J 37/32165 (2013.01); H01J 37/3444 (2013.01);
Abstract

The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fthrough a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fthrough the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fthrough the bias multi-frequency impedance controller relative to the impedance to ground at fthrough the side wall.


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