The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 30, 2014

Filed:

Mar. 14, 2011
Applicants:

Daisuke Hayashi, Yamanashi, JP;

Shoichiro Matsuyama, Yamanashi, JP;

Koichi Murakami, Yamanashi, JP;

Inventors:

Daisuke Hayashi, Yamanashi, JP;

Shoichiro Matsuyama, Yamanashi, JP;

Koichi Murakami, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3266 (2013.01); H01J 37/32541 (2013.01); H01J 37/32091 (2013.01);
Abstract

There is provided a plasma processing apparatus including a processing chamberconfigured to perform a plasma process on a wafer W; an upper electrodeand a lower electrodearranged to face each other in the processing chamberand configured to form a processing space therebetween; and a high frequency power supplyconnected with at least one of the upper electrodeand the lower electrodeand configured to output a high frequency power into the processing chamber. The upper electrodeincludes an upper basemade of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base


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