The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2014
Filed:
Apr. 02, 2012
Hsin-chang Lee, Hsin-Chu Xian, TW;
Yun-yue Lin, Hsinchu, TW;
Hung-chang Hsieh, Hsin-Chu, TW;
Chia-jen Chen, Jhudong Township, Hsinchu County, TW;
Yih-chen Su, Taichung, TW;
Ta-cheng Lien, Cyonglin Township, Hsinchu County, TW;
Anthony Yen, Zhubei, TW;
Hsin-Chang Lee, Hsin-Chu Xian, TW;
Yun-Yue Lin, Hsinchu, TW;
Hung-Chang Hsieh, Hsin-Chu, TW;
Chia-Jen Chen, Jhudong Township, Hsinchu County, TW;
Yih-Chen Su, Taichung, TW;
Ta-Cheng Lien, Cyonglin Township, Hsinchu County, TW;
Anthony Yen, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of making a lithography mask with a stress-relief treatment is disclosed. The method includes providing a substrate and depositing an opaque layer on the substrate. The opaque layer is patterned to form a patterned mask. A stress-relief treatment is applied to the patterned mask by using an radiation exposure.