The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 14, 2013
International Business Machines Corporation, Armonk, NY (US);
Christopher N. Collins, Wappinger Falls, NY (US);
Mukta G. Farooq, Hopewell Jct., NY (US);
Troy L. Graves-Abe, Wappinger Falls, NY (US);
Joyce C. Liu, Carmel, NY (US);
Gerd Pfeiffer, Poughquag, NY (US);
Thuy L. Tran-Quinn, Katonah, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The formation of TSVs (through substrate vias) for 3D applications has proven to be defect dependent upon the type of starting semiconductor substrate employed. In addition to the initial formation of TSVs via Bosch processing, backside 3D wafer processing has also shown a defect dependency on substrate type. High yield of TSV formation can be achieved by utilizing a substrate that embodies bulk micro defects (BMD) at a density between 1e4/cc (particles per cubic centimeter) and 1e7/cc and having equivalent diameter less than 55 nm (nanometers).