The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Apr. 13, 2012
Applicants:

Yaojian Lin, Singapore, SG;

Kang Chen, Singapore, SG;

Jianmin Fang, Singapore, SG;

Xia Feng, Singapore, SG;

Inventors:

Yaojian Lin, Singapore, SG;

Kang Chen, Singapore, SG;

Jianmin Fang, Singapore, SG;

Xia Feng, Singapore, SG;

Assignee:

STATS ChipPAC, Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/00 (2006.01); H01L 23/538 (2006.01); H01L 21/78 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 2224/20 (2013.01); H01L 24/19 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/15311 (2013.01); H01L 2224/04105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01013 (2013.01); H01L 21/78 (2013.01); H01L 2924/01078 (2013.01); H01L 23/49816 (2013.01); H01L 2924/01073 (2013.01);
Abstract

A semiconductor wafer contains a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the semiconductor wafer. A protective layer is formed over the insulating layer including an edge of the semiconductor die along the saw street. The protective layer covers an entire surface of the semiconductor wafer. Alternatively, an opening is formed in the protective layer over the saw street. The insulating layer has a non-planar surface and the protective layer has a planar surface. The semiconductor wafer is singulated through the protective layer and saw street to separate the semiconductor die while protecting the edge of the semiconductor die. Leading with the protective layer, the semiconductor die is mounted to a carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier and protective layer are removed. A build-up interconnect structure is formed over the semiconductor die and encapsulant.


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