The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Apr. 11, 2012
Applicants:

Takashi Sekito, Kakegawa, JP;

Daishi Yokoyama, Kakegawa, JP;

Takashi Fuke, Kakegawa, JP;

Yuji Tashiro, Kakegawa, JP;

Toshiaki Nonaka, Kakegawa, JP;

Yasuaki Tanaka, Tokyo, JP;

Inventors:

Takashi Sekito, Kakegawa, JP;

Daishi Yokoyama, Kakegawa, JP;

Takashi Fuke, Kakegawa, JP;

Yuji Tashiro, Kakegawa, JP;

Toshiaki Nonaka, Kakegawa, JP;

Yasuaki Tanaka, Tokyo, JP;

Assignee:

AZ Electronic Materials USA Corp., Somerville, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C08K 5/06 (2006.01); C08K 5/053 (2006.01); C09D 183/06 (2006.01); G02B 1/10 (2006.01); G02B 1/11 (2006.01); C09D 7/00 (2006.01); C09D 7/12 (2006.01); C09D 183/04 (2006.01); C08G 77/04 (2006.01);
U.S. Cl.
CPC ...
C09D 183/06 (2013.01); G02B 1/105 (2013.01); G02B 1/111 (2013.01); C09D 7/001 (2013.01); C09D 7/125 (2013.01); C09D 183/04 (2013.01); C08G 77/045 (2013.01);
Abstract

[Object] To provide a coating composition excellent in coatability and free from viscosity increase caused by degradation over time, and also to provide a hardened film-formation method employing that. [Means] The present invention provides a coating composition comprising: a siloxane resin having silanol groups or alkoxysilyl groups, and a polyol having hydroxyl groups at both ends of a straight 2 to 5 carbon atom hydrocarbon chain. This coating composition enables to form a hardened film of high transparency, of high insulation and of low dielectricity.


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