The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Oct. 10, 2012
Applicant:

Brewer Science Inc., Rolla, MO (US);

Inventors:

Vandana Krishnamurthy, Rolla, MO (US);

Daniel M. Sullivan, Rolla, MO (US);

Yubao Wang, Rolla, MO (US);

Qin Lin, Rolla, MO (US);

Sean Simmons, Rolla, MO (US);

Assignee:

Brewer Science Inc., Rolla, MO (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); C08G 73/10 (2006.01); G03F 7/09 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); C09D 179/08 (2006.01); C08G 73/00 (2006.01);
U.S. Cl.
CPC ...
C08G 73/00 (2013.01); C08G 73/1075 (2013.01); G03F 7/094 (2013.01); C08G 73/1078 (2013.01); H01L 21/3081 (2013.01); C08G 73/1067 (2013.01); H01L 21/0332 (2013.01); C09D 179/08 (2013.01);
Abstract

The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.


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