The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 18, 2014
Filed:
Dec. 06, 2011
Zigmund R. Camacho, Singapore, SG;
Dioscoro A. Merilo, Singapore, SG;
Jairus L. Pisigan, Singapore, SG;
Frederick R. Dahilig, Singapore, SG;
Zigmund R. Camacho, Singapore, SG;
Dioscoro A. Merilo, Singapore, SG;
Jairus L. Pisigan, Singapore, SG;
Frederick R. Dahilig, Singapore, SG;
STATS ChipPAC, Ltd., Singapore, SG;
Abstract
A semiconductor device is made by forming a first conductive layer over a first temporary carrier having rounded indentations. The first conductive layer has a non-linear portion due to the rounded indentations. A bump is formed over the non-linear portion of the first conductive layer. A semiconductor die is mounted over the carrier. A second conductive layer is formed over a second temporary carrier having rounded indentations. The second conductive layer has a non-linear portion due to the rounded indentations. The second carrier is mounted over the bump. An encapsulant is deposited between the first and second temporary carriers around the first semiconductor die. The first and second carriers are removed to leave the first and second conductive layers. A conductive via is formed through the first conductive layer and encapsulant to electrically connect to a contact pad on the first semiconductor die.