The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Sep. 14, 2012
Applicants:

Chun-chang Chen, Tainan, TW;

Shun-shing Yang, Tainan, TW;

Chuan-ling Wu, Yuanlin Township, TW;

Wang-pen MO, Pingtung, TW;

Hung-chang Hsieh, Hsin-Chu, TW;

Inventors:

Chun-Chang Chen, Tainan, TW;

Shun-Shing Yang, Tainan, TW;

Chuan-Ling Wu, Yuanlin Township, TW;

Wang-Pen Mo, Pingtung, TW;

Hung-Chang Hsieh, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate having two different topography areas adjacent to each other. A step-forming material (SFM) is deposited over the substrate. A patterned SFM is formed in the low topography area of the two areas. The formation of the patterned SFM provides a fairly planar surface across over the substrate.


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