The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
May. 07, 2012
Yi-hsien Chang, Shetou Township, TW;
Chun-ren Cheng, Hsinchu, TW;
Yi-shao Liu, Zhubei, TW;
Allen Timothy Chang, Hsinchu, TW;
Ching-ray Chen, Taipei, TW;
Yeh-tseng LI, Zhubei, TW;
Wen-hsiang Lin, Jhudong Township, TW;
Yi-Hsien Chang, Shetou Township, TW;
Chun-Ren Cheng, Hsinchu, TW;
Yi-Shao Liu, Zhubei, TW;
Allen Timothy Chang, Hsinchu, TW;
Ching-Ray Chen, Taipei, TW;
Yeh-Tseng Li, Zhubei, TW;
Wen-Hsiang Lin, Jhudong Township, TW;
Abstract
A method of forming of MEMS nanostructures includes a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A light reflecting layer is deposited over the substrate thereby covering the top surface and the sidewall surface of each mesa. A protection layer is formed over the light reflecting layer. An ARC layer is formed over the protection layer. An opening in a photo resist layer is formed over the ARC layer over each mesa. A portion of the ARC layer, the protection layer and the light reflecting layer are removed through the opening to expose the top surface of each mesa. The photo resist layer and the ARC layer over the top surface of each mesa are removed.