The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Dec. 31, 2009
Applicants:

Jeremy Cheng, Cupertino, CA (US);

Ho Yin Owen Fong, San Jose, CA (US);

Dan Wang, Saratoga, CA (US);

Zhendong Hong, San Jose, CA (US);

Indranil DE, Mountain View, CA (US);

Inventors:

Jeremy Cheng, Cupertino, CA (US);

Ho Yin Owen Fong, San Jose, CA (US);

Dan Wang, Saratoga, CA (US);

Zhendong Hong, San Jose, CA (US);

Indranil De, Mountain View, CA (US);

Assignee:

Intermolecular, Inc., San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/00 (2006.01); C23C 14/54 (2006.01);
U.S. Cl.
CPC ...
C23C 14/54 (2013.01);
Abstract

Substrate processing including correction for deposition location is described, including a combinatorial processing chamber that incorporates the correction. The combinatorial processing chamber can be used to process multiple regions of a substrate using different processing parameters on different regions. For example, one region can have one material deposited on it and another region can have a different material deposited on it, although other combinations and variations are possible. The combinatorial processing chamber uses a rotating and revolving substrate pedestal to be able to deposit on all locations or positions on a substrate. The combinatorial processing chamber uses a correction factor that accounts for variations in alignment and/or configuration of the processing chamber so that the actual location of deposition of a region is approximately the same as a desired location of deposition.


Find Patent Forward Citations

Loading…