The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2014
Filed:
Feb. 12, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chia-Lin Yu, Sigang, TW;
Chen-Hua Yu, Hsin-Chu, TW;
Ding-Yuan Chen, Taichung, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.