The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2014
Filed:
Jun. 16, 2010
Kenji Matsumoto, Nirasaki, JP;
Hitoshi Itoh, Nirasaki, JP;
Hidenori Miyoshi, Nirasaki, JP;
Shigetoshi Hosaka, Nirasaki, JP;
Hiroshi Sato, Nirasaki, JP;
Koji Neishi, Sendai, JP;
Junichi Koike, Sendai, JP;
Kenji Matsumoto, Nirasaki, JP;
Hitoshi Itoh, Nirasaki, JP;
Hidenori Miyoshi, Nirasaki, JP;
Shigetoshi Hosaka, Nirasaki, JP;
Hiroshi Sato, Nirasaki, JP;
Koji Neishi, Sendai, JP;
Junichi Koike, Sendai, JP;
Tokyo Electron Limited, Tokyo, JP;
National University Corporation Tohoku University, Sendai-shi, JP;
Abstract
A film forming method is disclosed in which a thin film comprising manganese is formed on an object to be processed which has, on a surface thereof, an insulating layer constituted of a low-k film and having a recess. The method comprises a hydrophilization step in which the surface of the insulating layer is hydrophilized to make the surface hydrophilic and a thin-film formation step in which a thin film containing manganese is formed on the surface of the hydrophilized insulating layer by performing a film forming process using a manganese-containing material gas on the surface of the hydrophilized insulating layer. Thus, a thin film comprising manganese, e.g., an MnOx film, is effectively formed on the surface of the insulating layer constituted of a low-k film, which has a low dielectric constant.