The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Jun. 29, 2009
Ching-chung Ko, Hsinchu County, TW;
Tung-hsing Lee, Taipei County, TW;
Kuei-ti Chan, Hsinchu, TW;
Tao Cheng, Hsinchu, TW;
Ming-tzong Yang, Hsinchu County, TW;
Ching-Chung Ko, Hsinchu County, TW;
Tung-Hsing Lee, Taipei County, TW;
Kuei-Ti Chan, Hsinchu, TW;
Tao Cheng, Hsinchu, TW;
Ming-Tzong Yang, Hsinchu County, TW;
Mediatek Inc., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
An integrated inductor includes a winding consisting of an aluminum layer atop a passivation layer, wherein the aluminum layer does not extend into the passivation layer and has a thickness that is not less than about 2.0 micrometers. The passivation layer has a thickness not less than about 0.8 micrometers. By eliminating copper from the integrated inductor and increasing the thickness of the passivation layer, the distance between the bottom surface of the inductor structure and the main surface of the semiconductor substrate is increased, thus the parasitic substrate coupling may be reduced and the Q-factor may be improved. Besides, the increased thickness of the aluminum layer may help improve the Q-factor as well.