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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8846482 B1

PDFFull Text
Date of Patent:
Sep. 30, 2014

Filed:

Sep. 22, 2011

Method and system for diffusion and implantation in gallium nitride based devices

Applicants:

David P. Bour, Cupertino, CA (US);

Richard J. Brown, Los Gatos, CA (US);

Isik C. Kizilyalli, San Francisco, CA (US);

Thomas R. Prunty, Santa Clara, CA (US);

Linda Romano, Sunnyvale, CA (US);

Andrew P. Edwards, San Jose, CA (US);

Hui Nie, Cupertino, CA (US);

Mahdan Raj, Cupertino, CA (US);

Inventors:

David P. Bour, Cupertino, CA (US);

Richard J. Brown, Los Gatos, CA (US);

Isik C. Kizilyalli, San Francisco, CA (US);

Thomas R. Prunty, Santa Clara, CA (US);

Linda Romano, Sunnyvale, CA (US);

Andrew P. Edwards, San Jose, CA (US);

Hui Nie, Cupertino, CA (US);

Mahdan Raj, Cupertino, CA (US);

Assignee:

Avogy, Inc., San Jose, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

David Vu

Assistant Examiner:

Mouloucoulaye Inoussa

Int. Cl.
CPC ...
H01L 21/8222 (2006.01); H01L 21/322 (2006.01); H01L 29/778 (2006.01); H01L 21/338 (2006.01); H01L 21/225 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/861 (2006.01); H01L 29/207 (2006.01); H01L 21/265 (2006.01); H01L 29/808 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/872 (2013.01); H01L 21/2258 (2013.01); H01L 29/66143 (2013.01); H01L 29/2003 (2013.01); H01L 29/861 (2013.01); H01L 29/207 (2013.01); H01L 21/26546 (2013.01); H01L 29/8083 (2013.01); H01L 29/66136 (2013.01);
Abstract

A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.

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