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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8836071 B1

PDFFull Text
Date of Patent:
Sep. 16, 2014

Filed:

Nov. 18, 2011

Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer

Applicants:

Richard J. Brown, Los Gatos, CA (US);

Thomas R. Prunty, Santa Clara, CA (US);

David P. Bour, Cupertino, CA (US);

Isik C. Kizilyalli, San Francisco, CA (US);

Hui Nie, Cupertino, CA (US);

Andrew P. Edwards, San Jose, CA (US);

Linda Romano, Sunnyvale, CA (US);

Madhan Raj, Cupertino, CA (US);

Inventors:

Richard J. Brown, Los Gatos, CA (US);

Thomas R. Prunty, Santa Clara, CA (US);

David P. Bour, Cupertino, CA (US);

Isik C. Kizilyalli, San Francisco, CA (US);

Hui Nie, Cupertino, CA (US);

Andrew P. Edwards, San Jose, CA (US);

Linda Romano, Sunnyvale, CA (US);

Madhan Raj, Cupertino, CA (US);

Assignee:

Avogy, Inc., San Jose, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Mark Tornow

Assistant Examiner:

Eric Ward

Int. Cl.
CPC ...
H01L 29/47 (2006.01); H01L 29/872 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66143 (2013.01); H01L 29/2003 (2013.01); H01L 29/872 (2013.01);
Abstract

A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes the first surface. The method also includes forming an ohmic metal contact electrically coupled to the first surface of the n-type GaN substrate and forming an n-type GaN epitaxial layer coupled to the second surface of the n-type GaN substrate. The method further includes forming an n-type aluminum gallium nitride (AlGaN) surface layer coupled to the n-type GaN epitaxial layer and forming a Schottky contact electrically coupled to the n-type AlGaN surface layer.

Find Patent Forward Citations

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Brown, Richard. (2014). Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer (U.S. Patent No. 8836071). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8836071

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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