The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
May. 28, 2013
Mattson Technology, Inc., Fremont, CA (US);
Tinghao Frank Wang, Irvine, CA (US);
Rao V. Annapragada, Union City, CA (US);
Cecilia Laura Quinteros, Santa Clara, CA (US);
Linda Nancy Marquez, San Jose, CA (US);
Steven M. Kennedy, Portland, OR (US);
Mattson Technology, Inc., Fremont, CA (US);
Abstract
Methods for forming microlenses on a semiconductor substrate are provided. An inductively coupled plasma etch process using a process gas that includes a mixture of CFand CHFcan be used to modify the lens shape of a plurality of microlens objects located on a semiconductor substrate to meet microlens specifications in terms of curvature, height, length, shape, and/or distance between adjacent microlens objects on the substrate. The inductively coupled plasma process can be performed in an inductively coupled plasma processing apparatus that includes a grounded Faraday shield to prevent any capacitive coupling during the plasma etching process to reduce sputtering of the microlens surface.