The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2014
Filed:
May. 06, 2011
Ramprakash Sankarakrishnan, San Jose, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Juan Carlos Rocha-alvarez, San Carlos, CA (US);
Dale R. Du Bois, Los Gatos, CA (US);
Mark Fodor, Los Gatos, CA (US);
Jianhua Zhou, San Jose, CA (US);
Amit Bansal, Sunnyvale, CA (US);
Mohamad A. Ayoub, Los Gatos, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Patrick Reilly, Dublin, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Thomas Nowak, Cupertino, CA (US);
Ramprakash Sankarakrishnan, San Jose, CA (US);
Ganesh Balasubramanian, Sunnyvale, CA (US);
Juan Carlos Rocha-Alvarez, San Carlos, CA (US);
Dale R. Du Bois, Los Gatos, CA (US);
Mark Fodor, Los Gatos, CA (US);
Jianhua Zhou, San Jose, CA (US);
Amit Bansal, Sunnyvale, CA (US);
Mohamad A. Ayoub, Los Gatos, CA (US);
Shahid Shaikh, Santa Clara, CA (US);
Patrick Reilly, Dublin, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Thomas Nowak, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.