The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Feb. 13, 2013
Globalfoundaries Inc., Grand Cayman, KY;
Joachim Patzer, Langebruck, DE;
Frank Seliger, Dresden, DE;
Markus Lenski, Dresden, DE;
Stephan Kronholz, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
One method disclosed includes forming a gate structure of a transistor above a surface of a semiconducting substrate, forming a sidewall spacer proximate the gate structure, forming a sacrificial layer of material above the protective cap layer, sidewall spacer and substrate, forming an OPL layer above the sacrificial layer, reducing a thickness of the OPL layer such that, after the reduction, an upper surface of the OPL layer is positioned at a level that is below a level of an upper surface of the protective cap layer, performing a first etching process to remove the sacrificial layer from above the protective cap layer to expose the protective cap layer for further processing, performing a second etching process to remove the protective cap layer and performing at least one process operation to remove at least one of the OPL layer or the sacrificial layer from above the surface of the substrate.