The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2014
Filed:
Aug. 16, 2010
Applicants:
Jin Ping Liu, Singapore, SG;
Alex K H See, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Inventors:
Jin Ping Liu, Singapore, SG;
Alex K H See, Singapore, SG;
Mei Sheng Zhou, Singapore, SG;
Liang Choo Hsia, Singapore, SG;
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A transistor device structure comprising: a substrate portion formed from a first material; and a source region, a drain region and a channel region formed in said substrate, the source and drain regions comprising a plurality of islands of a second material different from the first material, the islands being arranged to induce a strain in said channel region of the substrate.