The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2014
Filed:
Jun. 15, 2012
Chun-liang Shen, New Taipei, TW;
Kuo-ching Tsai, Hsin-Chu, TW;
Hou-ju LI, Hsin-Chu, TW;
Chun-sheng Liang, Changhua County, TW;
Kao-ting Lai, Hsin-Chu, TW;
Kuo-chiang Ting, Hsinchu, TW;
Chi-hsi Wu, Hsinchu, TW;
Chun-Liang Shen, New Taipei, TW;
Kuo-Ching Tsai, Hsin-Chu, TW;
Hou-Ju Li, Hsin-Chu, TW;
Chun-Sheng Liang, Changhua County, TW;
Kao-Ting Lai, Hsin-Chu, TW;
Kuo-Chiang Ting, Hsinchu, TW;
Chi-Hsi Wu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An integrated circuit device includes a fin at least partially embedded in a shallow trench isolation (STI) region and extending between a source and a drain. The fin is formed from a first semiconductor material and having a trimmed portion between first and second end portions. A cap layer, which is formed from a second semiconductor material, is disposed over the trimmed portion of the fin to form a high mobility channel. A gate electrode structure is formed over the high mobility channel and between the first and second end portions.