The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2014
Filed:
Nov. 17, 2010
Shuichiro Uda, Yamanashi, JP;
Koji Maruyama, Yamanashi, JP;
Yusuke Hirayama, Yamanashi, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor device for forming a deep hole in a substrate by using a photoresist film formed on the substrate includes a positioning step of positioning a substrate inside an etching chamber, the substrate having a photoresist film including an opening part formed thereon, a first etching step of performing plasma etching on the substrate positioned inside the etching chamber by using a first mixed gas including at least SiFand Owith the photoresist film as a mask, and a second etching step of forming a hole in the substrate by performing plasma etching on the substrate by using a second mixed gas including at least SF, O, and HBr after the first etching step.