The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 29, 2014
Filed:
Dec. 16, 2010
Keith Fox, Tigard, OR (US);
Dong Niu, West Linn, OR (US);
Joe Womack, Tigard, OR (US);
Mandyam Sriram, Beaverton, OR (US);
George Andrew Antonelli, Portland, OR (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Jennifer O'loughlin, Portland, OR (US);
Keith Fox, Tigard, OR (US);
Dong Niu, West Linn, OR (US);
Joe Womack, Tigard, OR (US);
Mandyam Sriram, Beaverton, OR (US);
George Andrew Antonelli, Portland, OR (US);
Bart van Schravendijk, Sunnyvale, CA (US);
Jennifer O'Loughlin, Portland, OR (US);
Novellus Systems, Inc., Fremont, CA (US);
Abstract
Methods and hardware for depositing ultra-smooth silicon-containing films and film stacks are described. In one example, an embodiment of a method for forming a silicon-containing film on a substrate in a plasma-enhanced chemical vapor deposition apparatus is disclosed, the method including supplying a silicon-containing reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a co-reactant to the plasma-enhanced chemical vapor deposition apparatus; supplying a capacitively-coupled plasma to a process station of the plasma-enhanced chemical vapor deposition apparatus, the plasma including silicon radicals generated from the silicon-containing reactant and co-reactant radicals generated from the co-reactant; and depositing the silicon-containing film on the substrate, the silicon-containing film having a refractive index of between 1.4 and 2.1, the silicon-containing film further having an absolute roughness of less than or equal to 4.5 Å as measured on a silicon substrate.