The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2014
Filed:
May. 29, 2012
Jan Hoentschel, Dresden, DE;
Shiang Yang Ong, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Thilo Scheiper, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Shiang Yang Ong, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
Thilo Scheiper, Dresden, DE;
GlobalFoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
A HKMG device with PMOS eSiGe source/drain regions is provided. Embodiments include forming first and second HKMG gate stacks on a substrate, each including a SiOcap, forming extension regions at opposite sides of the first HKMG gate stack, forming a nitride liner and oxide spacers on each side of HKMG gate stack; forming a hardmask over the second HKMG gate stack; forming eSiGe at opposite sides of the first HKMG gate stack, removing the hardmask, forming a conformal liner and nitride spacers on the oxide spacers of each of the first and second HKMG gate stacks, and forming deep source/drain regions at opposite sides of the second HKMG gate stack.