The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2014
Filed:
Mar. 30, 2012
Applicants:
Lin-ya Huang, Hsin-Chu, TW;
Chi-sheng Juan, Zhubei, TW;
Chien-lin Tseng, Zhubei, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method, and an apparatus formed thereby, to construct shallow recessed wells on top of exposed conductive vias on the surface of a semiconductor. The shallow recessed wells are subsequently filled with a conductive cap layer, such as a tantalum nitride (TaN) layer, to prevent or reduce oxidation which may otherwise occur naturally when exposed to air, or possibly occur during an under-bump metallization process.