The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 08, 2014
Filed:
Jan. 11, 2010
Ku-feng Yang, Dali, TW;
Weng-jin Wu, Hsin-Chu, TW;
Wen-chih Chiou, Miaoli, TW;
Jung-chih HU, Yangmei, TW;
Ku-Feng Yang, Dali, TW;
Weng-Jin Wu, Hsin-Chu, TW;
Wen-Chih Chiou, Miaoli, TW;
Jung-Chih Hu, Yangmei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of forming a semiconductor device is presented. A conductor is embedded within a substrate, wherein the substrate contains a non-conducting material. The backside of the substrate is ground to a thickness wherein at least 1 μm of the non-conducting material remains on the backside covering the conductor embedded within the substrate. Chemical mechanical polishing (CMP) is employed with an undiscerning slurry to the backside of the substrate, thereby planarizing the substrate and exposing the conductive material. A spin wet-etch, with a protective formulation, is employed to remove a thickness y of the non-conducting material from the backside of the substrate, thereby causing the conductive material to uniformly protrude from the backside of the substrate.