The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2014

Filed:

Aug. 09, 2012
Applicants:

Hsin-ting Huang, Bade, TW;

Jung-huei Peng, Jhubei, TW;

Shang-ying Tsai, Pingzhen, TW;

Li-min Hung, Longtan Township, TW;

Yao-te Huang, Hsin-Chu, TW;

Yi-chuan Teng, Zhubei, TW;

Chin-yi Cho, Kaohsiung, TW;

Inventors:

Hsin-Ting Huang, Bade, TW;

Jung-Huei Peng, Jhubei, TW;

Shang-Ying Tsai, Pingzhen, TW;

Li-Min Hung, Longtan Township, TW;

Yao-Te Huang, Hsin-Chu, TW;

Yi-Chuan Teng, Zhubei, TW;

Chin-Yi Cho, Kaohsiung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

A structure comprises a first semiconductor substrate, a first bonding layer deposited on a bonding side the first semiconductor substrate, a second semiconductor substrate stacked on top of the first semiconductor substrate and a second bonding layer deposited on a bonding side of the second semiconductor substrate, wherein the first bonding layer is of a horizontal length greater than a horizontal length of the second semiconductor substrate, and wherein there is a gap between an edge of the second bonding layer and a corresponding edge of the second semiconductor substrate.


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